https://scholars.lib.ntu.edu.tw/handle/123456789/634634
標題: | Stacked Two Ge<inf>0.98</inf>Si<inf>0.02</inf>Nanowire nFETs with High-κ Dielectrics Featuring High I<inf>ON</inf>per Footprint of 4800 μ A μ m at VOV= VDS=0.5 V | 作者: | Chen, Yu Rui Tu, Chien Te Zhao, Zefu Liu, Yi Chun Huang, Bo Wei Xing, Yifan Chen, Guan Hua CHEN-WUING LIU |
公開日期: | 1-一月-2023 | 來源出版物: | 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings | 摘要: | The peak dielectric constant of 47 is obtained with Hf0.2Zr0.8O2. The Hf0.2Zr0.8O2 is used in the gate stack on the high mobility Ge0.98Si0.02 channel to significantly enhance the drive current by taking advantage of the high dielectric constant. The stacked two Ge0.98Si0.02 gate-all-around nanowires can have high ION per footprint of 4800 μ A μ m at VOV= VDS=0.5 V. The thermal budget is as low as 450 °C. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/634634 | ISBN: | 9798350334166 | DOI: | 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134304 |
顯示於: | 電機工程學系 |
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