https://scholars.lib.ntu.edu.tw/handle/123456789/636114
Title: | First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec,Ioff<-7μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C | Authors: | Chiu, Jih Chao Sarkar, Eknath Liu, Yuan Ming Chen, Yu Ciao Fan, Yu Cheng CHEE-WEE LIU |
Issue Date: | 1-Jan-2023 | Journal Volume: | 2023-June | Source: | Digest of Technical Papers - Symposium on VLSI Technology | Abstract: | The first amorphous InGaZnO (a-IGZO) gate-all-around (GAA) nanosheet FET is demonstrated. All of the process temperatures are below 300°C, showing great back-end-of-line (BEOL) compatibility. The channel release is achieved by sophisticated reactive-ion etch (RIE) with extremely high etching selectivity of the SiN sacrificial layer over the a-IGZO channel. A novel composite field oxide (FOX) is exploited to form an etching stop layer and avoid gate leakage. The device with gate length (L) of 52nm shows Ioff < 10-7 μA/mum (detection limit), high Ion/Ioff > 1.3 × 108, the enhancement mode with the positive threshold voltage (VT) of 3.5V, and the clear saturation region in the output characteristic. Moreover, the smallest SS of 61mV/dec among all oxide semiconductor nanowire /nanosheet devices is achieved with the gate length of 150nm. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/636114 | ISBN: | 9784863488069 | ISSN: | 07431562 | DOI: | 10.23919/VLSITechnologyandCir57934.2023.10185385 |
Appears in Collections: | 電機工程學系 |
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