https://scholars.lib.ntu.edu.tw/handle/123456789/636115
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Zhao, Zefu | en_US |
dc.contributor.author | Chen, Yu Rui | en_US |
dc.contributor.author | Chen, Yun Wen | en_US |
dc.contributor.author | Hsieh, Wan Hsuan | en_US |
dc.contributor.author | Wang, Jer Fu | en_US |
dc.contributor.author | Lee, Jia Yang | en_US |
dc.contributor.author | Xing, Yifan | en_US |
dc.contributor.author | Chen, Guan Hua | en_US |
dc.contributor.author | CHEE-WEE LIU | en_US |
dc.date.accessioned | 2023-10-17T06:42:25Z | - |
dc.date.available | 2023-10-17T06:42:25Z | - |
dc.date.issued | 2023-01-01 | - |
dc.identifier.isbn | 9784863488069 | - |
dc.identifier.issn | 07431562 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/636115 | - |
dc.description.abstract | Nearly epitaxially grown ferroelectric Hf0.5 Zr0.5 O2 (HZO) films on (001) n+-Si(3E19/cm 3) and n+ -Ge(3E20/cm 3) substrates exhibit record remanent polarization (2P r) of 84 and 73μC/cm2, respectively, which are higher than that on amorphous SiO2 (α-SiO2) and partially crystallized TiN underlayers. HZO films on n+ -Si and n+-Ge also show high coercive field (2Ec) of 8.8 and 5.8 MV/cm, respectively. Superlattice HZO films by plasma-enhanced atomic layer deposition (PEALD) show that c-axis is well-aligned with the growth direction in scanning transmission electron microscopy (STEM) images, consistent with observed high 2Pr of epitaxial HZO films on n+-Si(Ge). The density functional theory (DFT) indicates o-phase is greatly stabilized in the HZO films on n+- Si(Ge) substrates due to low interfacial energy at o-phase/Si(Ge) interfaces as compared to m-(t-)phase/Si(Ge). After 1E9 and 1E11 endurance cycles, the HZO on n+-Si and n+-Ge substrates have record finial 2P r of 51 and 47 μC/cm2, respectively. Our study demonstrates the way to achieve single crystalline ferroelectric HZO films by using small misfit substrates without interfacial layers. The thermal budget is as low as 450°C. | en_US |
dc.relation.ispartof | Digest of Technical Papers - Symposium on VLSI Technology | en_US |
dc.title | Towards Epitaxial Ferroelectric HZO on n<sup>+</sup>-Si/Ge Substrates Achieving Record 2P<inf>r</inf>= 84 μC/cm<sup>2</sup>and Endurance > 1E11 | en_US |
dc.type | conference paper | en_US |
dc.identifier.doi | 10.23919/VLSITechnologyandCir57934.2023.10185233 | - |
dc.identifier.scopus | 2-s2.0-85167576722 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/85167576722 | - |
dc.relation.journalvolume | 2023-June | en_US |
dc.relation.pageend | 2 | en_US |
item.openairetype | conference paper | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | MediaTek-NTU Research Center | - |
crisitem.author.dept | Center for Artificial Intelligence and Advanced Robotics | - |
crisitem.author.orcid | 0000-0002-6439-8754 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 電機工程學系 |
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