https://scholars.lib.ntu.edu.tw/handle/123456789/636612
標題: | Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations | 作者: | Chen, Ying Chuan Chao, Yu Ting Chen, Edward CHAO-HSIN WU YUH-RENN WU |
關鍵字: | Physics - Materials Science; Physics - Materials Science; physics.app-ph; Physics - Computational Physics | 公開日期: | 1-九月-2023 | 卷: | 7 | 期: | 9 | 來源出版物: | Physical Review Materials | 摘要: | Resistive memory based on two-dimensional (2D) tungsten disulfide (WS2), molybdenum disulfide (MoS2), and hexagonal boron nitride (h-BN) materials is studied via experiments and simulations. The influence of the active layer thicknesses is discussed, and the thickness with the best on/off ratio is found for 2D resistive random-access memory (RRAM). This work reveals fundamental differences between a 2D RRAM and conventional oxide RRAM. Furthermore, the physical parameters extracted using the kinetic Monte Carlo (KMC) model indicate that 2D materials have a lower diffusion activation energy along the vertical direction, where a smaller bias voltage and a shorter switching time can be achieved. The diffusion activation energy from the chemical vapor deposition (CVD)-grown sample is much lower than for mechanically exfoliated samples. The results suggest that MoS2 has the fastest switching speed among the three considered 2D materials. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/636612 | ISSN: | 2475-9953 | DOI: | 10.1103/PhysRevMaterials.7.094001 |
顯示於: | 電機工程學系 |
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