https://scholars.lib.ntu.edu.tw/handle/123456789/637000
標題: | Switching Behavior Equivalent Circuit Model for SiC Driver IC | 作者: | Duan, Siang Yung CHING-JAN CHEN Chen, Yen Ming Lai, Wen Shang Chaturvedi, Pradyumn |
關鍵字: | Double Pulse Test | Gate Driver | SiC MOSFET | 公開日期: | 1-一月-2023 | 來源出版物: | WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia | 摘要: | This paper proposed a switching behavior equivalent circuit model for the gate driver board of SiC MOSFETs that includes the gate driver IC and parasitic components of the printed circuit board (PCB). Because SiC applications involve high switching frequency, high voltages, and high currents, the gate driver would greatly affect the switching performance and loss. Therefore, this paper presents a novel equivalent circuit model for SiC gate driver that incorporates nonlinear resistors and capacitors of driver output stage and parasitic inductance of PCB to achieve a more accurate prediction of switching behavior. The equivalent circuit model is then built into LTSPICE simulation model and compared with measured VGS waveform of gate driver board connected to a capacitor to model the input capacitance of SiC. Compared with the old modeling methods, the new modeling methods reduces the error between the simulation and measurement for Vout rising (falling) time from 15% to less than 1%. The accurate equivalent circuit can provide accurate digital twin and help designers reduce testing time and cost. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/637000 | ISBN: | 9798350337112 | DOI: | 10.1109/WiPDAAsia58218.2023.10261935 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。