https://scholars.lib.ntu.edu.tw/handle/123456789/639426
標題: | Analytical Modeling of the Temporal Response of the Transient Displacement Currents in MIS Tunnel Diodes Under Low-Voltage Operation | 作者: | Huang, Sung Wei JENN-GWO HWU |
關鍵字: | Analytical modeling | Logic gates | metal–insulator–semiconductor (MIS) | Radiative recombination | Silicon | Substrates | Transient analysis | transient current | tunnel diode | Tunneling | Voltage | 公開日期: | 1-一月-2023 | 卷: | 71 | 期: | 2 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | In this work, the temporal response of the transient displacement currents in a metal–insulator–semiconductor (MIS) tunnel diode with a 3-nm oxide layer under low-voltage operation ( |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/639426 | ISSN: | 00189383 | DOI: | 10.1109/TED.2023.3341888 |
顯示於: | 電機工程學系 |
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