https://scholars.lib.ntu.edu.tw/handle/123456789/639716
標題: | A new method for direct extraction of ambipolar diffusion length in a thin film by scanning photoluminescence microscopy | 作者: | Wei, Yu Chien Chu, Cheng Hao MING-HUA MAO Lin, You Ru HAO-HSIUNG LIN |
關鍵字: | diffusion length | GaAs thin film | scanning photoluminescence microscopy | 公開日期: | 1-一月-2024 | 卷: | 63 | 期: | 1 | 來源出版物: | Japanese Journal of Applied Physics | 摘要: | In this study, we demonstrate a new method of scanning photoluminescence (PL) microscopy (SPLM) to directly extract the ambipolar diffusion length in a GaAs thin film. The PL intensity of the GaAs thin film was recorded while the excitation source scanned along a 400 nm wide slit between the metal masks to avoid the influence of surface recombination and light scattering at the sample edge. The experimental SPLM profile showed a simple-exponential-decay functional form and was numerically verified. A fitted decay length of 723 nm was extracted, which represents the ambipolar diffusion length of the GaAs thin film and agrees well with our previous study. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/639716 | ISSN: | 00214922 | DOI: | 10.35848/1347-4065/ad18cd |
顯示於: | 電機工程學系 |
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