https://scholars.lib.ntu.edu.tw/handle/123456789/640839
Title: | First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels | Authors: | Tu, Chien Te Hsieh, Wan Hsuan Chen, Yu Rui Huang, Bo Wei Liao, Yu Tsung WEI-JEN CHEN Liu, Yi Chun Cheng, Chun Yi Chou, Hung Chun Lu, Hao Yi Hsin, Cheng Hsien He, Geng Min Woo, Dong Soo Chueh, Shee Jier CHEE-WEE LIU |
Issue Date: | 1-Jan-2023 | Source: | Technical Digest - International Electron Devices Meeting, IEDM | Abstract: | Monolithic 3D stacked Ge0.9Sn0.1 nanosheet and Ge0.75Si0.25 nanosheet complementary FETs with multiple P/N junction isolation by in-situ doped CVD epitaxy are experimentally demonstrated. Heterogeneous channels with common single work function metal gate structure are fabricated as a CMOS inverter with the matched VT and good voltage transfer characteristics. VT tuning is achieved individually by the band alignment of GeSi and GeSn for n-channel and p-channel, respectively, for the first time. The Hf0.2Zr0.8O2 gate stacks with extremely high ? of 47 are integrated to enhance the ION of CFET for high performance. The monolithic stacked heterogeneous complementary FETs without the need of wafer bonding, dielectric isolation, selective epitaxial growth, and dual work function metal can simplify the process for transistor 3D stacking. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/640839 | ISBN: | 9798350327670 | ISSN: | 01631918 | DOI: | 10.1109/IEDM45741.2023.10413805 |
Appears in Collections: | 電機工程學系 |
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