Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2017 | Perfecting the Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition | MINGHWEI HONG ; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J. | Applied Physics Letters | |||
2017 | Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance | Pi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | |||
2014 | Synchrotron radiation photoemission study of interfacial electronic structure of HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>As(001)-4 ? 2 from atomic layer deposition | Pi, T.W.; Lin, T.D.; Lin, H.Y.; Chang, Y.C.; Wertheim, G.K.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters |