https://scholars.lib.ntu.edu.tw/handle/123456789/443306| Title: | Perfecting the Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition | Authors: | Hong, M. Wan, H.W. Lin, K.Y. Chang, Y.C. Chen, M.H. Lin, Y.H. Lin, T.D. Pi, T.W. Kwo, J. MINGHWEI HONG |
Issue Date: | 2017 | Journal Volume: | 111 | Journal Issue: | 12 | Source: | Applied Physics Letters | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443306 | DOI: | 10.1063/1.5003616 |
| Appears in Collections: | 物理學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
