公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2016 | Compact modeling and simulation of TSV with experimental verification | Yan, J.-Y.; Jan, S.-R.; Huang, Y.-C.; Lan, H.-S.; Liu, C.W.; Huang, Y.-H.; Hung, B.; Chan, K.-T.; Huang, M.; Yang, M.-T.; CHEE-WEE LIU | 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 | | | |
2012 | Direct and indirect radiative recombination from Ge | CHEE-WEE LIU ; Liu, C.W.; Cheng, T.-H.; Chen, Y.-Y.; Jan, S.-R.; Chen, C.-Y.; Chan, S.T.; Nien, Y.-H.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU | Thin Solid Films | | | |
2010 | Extrinsic effects of indirect radiative transition of Ge | CHEE-WEE LIU ; Jan, S.-R.; Lee, C.-H.; Cheng, T.-H.; Chen, Y.-Y.; Peng, K.-L.; Chan, S.-T.; Liu, C.W.; Yuji, Y.; Bernd, T.; CHEE-WEE LIU | ECS Transactions | | | |
2019 | First Vertically Stacked, Compressively Strained, and Triangular Ge<inf>0.91</inf>Sn<inf>0.09</inf> pGAAFETs with High ION of 19.3£gA at VOV=VDS=-0.5V, Gm of 50.2£gS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching | Huang, Y.-S.; Ye, H.-Y.; Lu, F.-L.; Liu, Y.-C.; Tu, C.-T.; Lin, C.-Y.; Lin, S.-H.-Y.; Jan, S.-R.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | | | |
2011 | Influence of defects and interface on radiative transition of Ge | CHEE-WEE LIU ; Jan, S.-R.; Chen, C.-Y.; Lee, C.-H.; Chan, S.-T.; Peng, K.-L.; Liu, C.W.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU | Applied Physics Letters | | | |
2004 | Mechanically strained Si-SiGe HBTs | CHEE-WEE LIU ; Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2004 | Mechanically strained Si/SiGe HBTs | Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W. | IEEE Electron Device Letters | | | |
2004 | Mechanically strained strained-Si NMOSFETs | Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; Liu, C.W. | IEEE Electron Device Letters | | | |
2004 | Mechanically Strained Strained-Si NMOSFETs | Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2013 | Modeling and optimization of edge dislocation stressors | CHEE-WEE LIU ; Tsai, M.-H.; Jan, S.-R.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2016 | Modeling and simulation of TSV induced keep-out zone using silicon data | Liu, C.W.; Yan, J.-Y.; Jan, S.-R.; CHEE-WEE LIU | 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings | | | |
2015 | Reply to 'comment on 'A compact analytic model of the strain field induced by through ilicon vias'' | CHEE-WEE LIU ; Jan, S.-R.; Chou, T.-P.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2006 | Strained Pt Schottky diodes on n-type Si and Ge | Liao, M. H.; Kuo, P.-S.; Jan, S.-R.; Chang, S. T.; Liu, C. W. | Applied Physics Letters | | | |
2006 | Strained Pt Schottky diodes on n-type Si and Ge | CHEE-WEE LIU ; Liao, M.H.; Kuo, P.-S.; Jan, S.-R.; Chang, S.T.; CHEE-WEE LIU | Applied Physics Letters | | | |