https://scholars.lib.ntu.edu.tw/handle/123456789/549177
標題: | First Vertically Stacked, Compressively Strained, and Triangular Ge<inf>0.91</inf>Sn<inf>0.09</inf> pGAAFETs with High ION of 19.3£gA at VOV=VDS=-0.5V, Gm of 50.2£gS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching | 作者: | CHEE-WEE LIU Huang, Y.-S. Ye, H.-Y. Lu, F.-L. Liu, Y.-C. Tu, C.-T. Lin, C.-Y. Lin, S.-H.-Y. Jan, S.-R. CHEE-WEE LIU |
公開日期: | 2019 | 卷: | 2019-June | 起(迄)頁: | T180-T181 | 來源出版物: | Digest of Technical Papers - Symposium on VLSI Technology | URI: | https://www.scopus.com/inward/record.url?eid=2-s2.0-85070341014&partnerID=40&md5=a81bb662f8725a90fa957d11059b4900 https://scholars.lib.ntu.edu.tw/handle/123456789/549177 |
DOI: | 10.23919/VLSIT.2019.8776550 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。