公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2000 | First demonstration of GaAs CMOS | MINGHWEI HONG ; Baillargeon, JN; Kwo, J; Mannaerts, JP; Cho, AY | 2000 IEEE International Symposium on Compound Semiconductors | | | |
2004 | Fundamental Study and Oxide Reliability of the MBE-Grown Ga 2- x Gd x O 3 Dielectric Oxide for Compound Semiconductor MOSFETs | Kwo, J; MINGHWEI HONG ; Mannaerts, JP; Lee, YJ; Wu, YD; Lee, WG; Milkap, S; Yang, B; Gustaffson, T | MRS Proceedings | | | |
1999 | Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETs | Wang, YC; MINGHWEI HONG ; Kuo, JM; Mannaerts, JP; Tsai, HS; Kwo, J; Krajewski, JJ; Chen, YK; Cho, AY | Electronics Letters | | | |
1998 | Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Kuo, JM; MINGHWEI HONG ; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others | Electron Device Letters, IEEE | | | |
1995 | Ga203 films for electronic and optoelectronic ap | Passlack, M; Schubert, EF; Hobson, WS; MINGHWEI HONG ; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ | Journal of Applied Physics | | | |
1998 | Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications | Lay, Tsong S; MINGHWEI HONG ; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others | Asia Pacific Symposium on Optoelectronics' 98 | | | |
1998 | Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs | MINGHWEI HONG ; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others | 28th State-of-the-Art Program on Compound Semiconductors | | | |
1995 | Ga2O3 films for electronic and optoelectronic applications | Passlack, M; Schubert, EF; Hobson, WS; MINGHWEI HONG ; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ | Journal of Applied Physics | | | |
1995 | GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES | Passlack, M; MINGHWEI HONG ; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ | Compound Semiconductors, 1994 | | | |
1997 | Ga2O3/GaAs depletion mode MOSFET | Middleton, JR; Hsia, HK; Caruth, D; Moy, AM; Cheng, KY; Feng, M; MINGHWEI HONG ; Mannaerts, JP | Workshop on Native Oxides of Compound semiconductors | | | |
2003 | GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL; Mannaerts, JP; MINGHWEI HONG ; Ng, KK; others | Applied Physics Letters | | | |
1998 | GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3) as gate oxide | Kim, S-J; Park, J-W; MINGHWEI HONG ; Mannaerts, JP | Circuits, Devices and Systems, IEE Proceedings | | | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; MINGHWEI HONG ; others | Electron Device Letters, IEEE | | | |
2001 | GaAs MOSFET-Materials Physics and Devices | MINGHWEI HONG ; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS | APPC 2000 | | | |
1996 | GaAs surface passivation using in-situ oxide deposition | Passlack, M; MINGHWEI HONG ; Opila, RL; Mannaerts, JP; Kwo, JR | Applied Surface Science | | | |
1993 | GaAs surface reconstruction obtained using a dry process | Choquette, Kent D; MINGHWEI HONG ; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS | Journal of Applied Physics | | | |
2004 | GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; MINGHWEI HONG ; Ng, KK; others | Journal of electronic materials | | | |
1990 | GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes | Wang, YH; Tai, K; Wynn, JD; MINGHWEI HONG ; Fischer, RJ; Mannaerts, JP; Cho, AY | Photonics Technology Letters, IEEE | | | |
1991 | GaAs/AlxGa1- xAs quantum well infra-red photodetectors with cutoff wavelength $λ$c= 14.9 $μ$m | Zussman, A; Levine, BF; MINGHWEI HONG ; Mannaerts, JP | Electronics Letters | | | |
2002 | GaN/Gd2O3/GaN Single Crystal Heterostructure | MINGHWEI HONG ; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI | State-of-the-Art Program on Compound Semiconductors XXXVI, and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II | | | |