公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2015 | Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p-n diode | Yang, C.C.; Su, Y.K.; Lin, H.H.; HAO-HSIUNG LIN | Microelectronics Journal | | | |
1983 | Numerical analysis of an injection laser with stripe geometry | Chen, L.G.; Chang, C.Y.; Su, Y.K.; Wu, T.S.; LIANG-GEE CHEN | Optics and Lasers in Engineering | 0 | 0 | |
1994 | P-N Double Quantum Well Resonant Interband Tunneling Diode with Peak-to-Valley Current Ratio of 144 at Room Temperature | Tsai, H.H.; Su, Y.K.; Wang, R.L.; Lin, H.H.; Lee, T.L.; HAO-HSIUNG LIN | IEEE Electron Device Letters | | | |
1998 | Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs | Kuo, C.W.; Su, Y.K.; Tsia, C.Y.; HAO-HSIUNG LIN | Solid-State Electronics | 7 | 7 | |