Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p-n diode

Journal

Microelectronics Journal

Journal Volume

46

Journal Issue

12

Pages

1392-1397

Date Issued

2015

Author(s)

Yang, C.C.

Su, Y.K.

Lin, H.H.

DOI

10.1016/j.mejo.2015.08.017

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/500393

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84942025929&doi=10.1016%2fj.mejo.2015.08.017&partnerID=40&md5=b9163661c10589f1b5d09c90c8006f7c

Type

journal article