公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2019 | Record Low Contact Resistivity (4.4¡?10<sup>-10</sup> £[-cm<sup>2</sup>) to Ge Using In-situ B and Sn Incorporation by CVD with Low Thermal Budget (?400¢XC) and Without Ga | Lu, F.-L.; Tsai, C.-E.; Huang, C.-H.; Ye, H.-Y.; Lin, S.-Y.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | | | |
2020 | Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure | Liu, X.; Lu, T.-M.; Harris, C.T.; Lu, F.-L.; Liu, C.-Y.; JIUN-YUN LI ; CHEE-WEE LIU ; Du, Rui-Rui | Physical Review B | 1 | 0 | |