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J. B. Kuo
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2002
The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure
J. B. Kuo; S. C. Lin; JAMES-B KUO
Hong Kong Electron Devices Meeting
2
0
2008
Transient Behavior of 40nm PD SOI NMOS Device Considering STI-Induced Mechanical Stress Effects
J. S. Su; J. B. Kuo; JAMES-B KUO
IEDMS
2007
Triple Threshold Static Power Minimization in High-Level Synthesis of VLSI CMOS
H. Chen; J. B. Kuo; M. Syrzycki; JAMES-B KUO
Power and Timing Modeling and Optimization Conf (PATMOS)
2007
Triple-Threshold Static Power Minimization Technique in High-Level Synthesis for Designing High-Speed Low-Power SOC Applications Using 90nm MTCMOS Technology
H. I. Chen; E. K. Loo; J. B. Kuo; M. J. Syrzycki; JAMES-B KUO
Canadian Conference on Electrical and Computer Engineering
7
0
2012
Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect
S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
Eurosoi Conference
2013
Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect
D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO
International Electron Devices and Material Symposium
2013
Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect
D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO
International Semiconductor Devices Research Symposium