公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2004 | Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers | G. H. Liao; C. L. Tsai; P. W. Liu; J. Lin; HAO-HSIUNG LIN | 2004 IEDMS | | | |
1997 | Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses | Dai, Y.T.; Fan, J.C.; Chen, Y.F.; Lin, R.M.; Lee, S.C.; YANG-FANG CHEN ; SI-CHEN LEE ; HAO-HSIUNG LIN | Journal of Applied Physics | 126 | 122 | |
2003 | Temperature dependence of photoreflectance in InAs/GaAs quantum dots | C. M. Lai; F. Y. Chang; C. W. Chang; C. H. Kao; H. H. Lin; G. J. Jan; J. Lee; HAO-HSIUNG LIN | Applied Physics Letters | | 18 | |
1998 | Temperature dependence of photoreflectance study on InAs/GaAs self-assembled quantum dots | Jan, G.J.; Chang, S.M.; Lai, C.M.; Chen, M.C.; HAO-HSIUNG LIN | Proceedings of SPIE - The International Society for Optical Engineering | | | |
2007 | Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates | T. C. Ma; T. Y. Chen; Y. T. Lin; HAO-HSIUNG LIN | MBE Taiwan 2007 | | | |
2014 | Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy | H. P. Hsu; P. H. Wu; J. Y. Chen; B. H. Chen; Y. S. Huang; Y. C. Chin; K. K. Tiong; HAO-HSIUNG LIN | Japanese Journal of Applied Physics | 0 | 0 | |
2010 | Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum well | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | 10th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-X) | | | |
2011 | Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction | F. Cheng; T. Fa; S. Yao; C. J. Wu; H. H. Lin; Z. C. Feng; HAO-HSIUNG LIN | Journal of Physics D: Applied Physics | | 3 | |
2009 | The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells | J. M. Lin; L. C. Chou; HAO-HSIUNG LIN | International electron devices and materials symposia | | | |
2010 | The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy | J. M. Lin; L. C. Chou; HAO-HSIUNG LIN | 22nd International Conference on Indium Phosphide and Related Materials (IPRM) | | | |
1987 | The Hot Electron Effect in Double Heterojunction Bipolar Transistors:Theory and Experiment | Lee, Si-Chen ; Lin, Hao-Hsiung | 13th EDMS | | | |
2005 | The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well | G. L. Wang; Y. S. Huang; H. H. Lin; C. H. Chan; HAO-HSIUNG LIN | OPT 2005 | | | |
1990 | The Transport Mechanism for Base Current in an AlGaAs/GaAs Heterojunction Bipolar Transistor | Lee, Si-Chen ; Lin, Hao-Hsiung | 1990 International Electron Devices and Materials Symposium | | | |
1985 | Theory on the AlGaAs Double Heterojunction Transistor | Lee, Si-Chen ; Lin, Hao-Hsiung | The 11th EDMS | | | |
2009 | Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wells | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | OPT2009 | | | |
1996 | Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor | Tsen, K.T.; Ferry, D.K.; Wang, J.-S.; Huang, C.-H.; HAO-HSIUNG LIN | Applied Physics Letters | | | |
2001 | Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells | C. H. Lee; Y. H. Chang; C. F. Huang; M. Y. Huang; H. H. Lin; C. P. Lee; HAO-HSIUNG LIN | Chinese Journal of Physics | | | |
1986 | Transport theory of the double heterojunction bipolar transistor based on current balancing concept | Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN | Journal of Applied Physics | 40 | 37 | |
1987 | Transport Theory of the Double Heterojunction Bipolar Transistor Based on Current Balancing Concept | Lee, Si-Chen ; Lin, Hao-Hsiung | Jouranl of Applied Physics | | | |
2013 | Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy | Y. R. Chen; L. C. Chou; Y. J. Yang; HAO-HSIUNG LIN | Journal of Physics D: Applied Physics | | | |