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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor
Details
Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor
Journal
Applied Physics Letters
Journal Volume
69
Journal Issue
23
Pages
3575-3577
Date Issued
1996
Author(s)
Tsen, K.T.
Ferry, D.K.
Wang, J.-S.
Huang, C.-H.
HAO-HSIUNG LIN
DOI
10.1063/1.117211
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/500406
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0042857074&doi=10.1063%2f1.117211&partnerID=40&md5=123e263929e37e0b8f88a1c0a4b3ad4a
Type
journal article