公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | Effect of image charges in the drain delay of AlGaN/GaN high electron mobility transistors | Chung, JW; Zhao, X; Wu, YR; Singh, J; Palacios, T; YUH-RENN WU | Applied Physics Letters | 14 | 17 | |
2015 | The effect of tensile strain on optical anisotropy and exciton of m-plane ZnO | Wang H.H; Tian J.S; Chen C.Y; Huang H.H; Yeh Y.C; Deng P.Y; Chang L; Chu Y.H; YUH-RENN WU ; He J.H. | IEEE Photonics Journal | 2 | 4 | |
2022 | Efficiency and Forward Voltage of Blue and Green Lateral LEDs with v -shaped Defects and Random Alloy Fluctuation in Quantum Wells | Ho C.-H; Speck J.S; Weisbuch C; Wu Y.-R.; YUH-RENN WU | Physical Review Applied | 12 | 11 | |
2014 | Efficiency dip observed with InGaN-based multiple quantum well solar cells | Lai, K. Y.; Lin, G. J.; Wu, Yuh-Renn; Tsai, Meng-Lun; He, Jr-Hau; YUH-RENN WU | Optics Express | 6 | 7 | |
2023 | Efficient and Bright Organic Radical Light-Emitting Diodes with Low Efficiency Roll-Off | Cho, Hwan Hee; Gorgon, Sebastian; Hung, Hsiao Chun; Huang, Jun Yu; YUH-RENN WU ; Li, Feng; Greenham, Neil C.; Evans, Emrys W.; Friend, Richard H. | Advanced Materials | 1 | 0 | |
2022 | Efficient vertical charge transport in polycrystalline halide perovskites revealed by four-dimensional tracking of charge carriers | Cho, Changsoon; Feldmann, Sascha; Yeom, Kyung Mun; Jang, Yeoun Woo; Kahmann, Simon; Huang, Jun Yu; Yang, Terry Chien‐Jen; Khayyat, Mohammed Nabaz Taher; YUH-RENN WU ; Choi, Mansoo; Noh, Jun Hong; Stranks, Samuel D.; Greenham, Neil C. | Nature Materials | 15 | 10 | |
2011 | Electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructures | Chin, H-A; Cheng, I-C; Li, C-K; Wu, Y-R; Chen, J. Z.; Lu, W-S; Lee, W-L; I-CHUN CHENG ; JIAN-ZHANG CHEN ; YUH-RENN WU | Journal of Physics D-Applied Physics | 31 | 28 | |
2022 | Electro-Optical Numerical Modeling for the Design of UVA Nitride-Based Vertical-Cavity Surface-Emitting Laser Diodes | Chuang C.-M; Cheng Y.-H; Wu Y.-R.; YUH-RENN WU | IEEE Journal of Selected Topics in Quantum Electronics | 0 | 0 | |
2015 | Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy | Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU | Journal of Applied Physics | 47 | 38 | |
2009 | Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting | Wu, YR; Lin, YY; Huang, HH; Singh, J; YUH-RENN WU | Journal of Applied Physics | 117 | 105 | |
2017 | Electronic Properties of MoS2 Nanoribbon under Strain Using Tight Binding Method | Shuo-Fan Chen; Yuh-Renn Wu; YUH-RENN WU | Physica Status Solidi B: Basic Solid State Physics | | | |
2017 | Electronic properties of MoS2 nanoribbon with strain using tight-binding method | Chen S.-F; Wu Y.-R.; YUH-RENN WU | Physica Status Solidi (B) Basic Research | 11 | 11 | |
2008 | Enhanced growth of anodic alumina nanochannels on Ga-ion pre-irradiated aluminum | Liu, C.Y.; Datta, A.; Liu, N.W.; Wu, Y.R.; Wang, H.H.; Chuang, T.H.; YUH-RENN WU ; TUNG-HAN CHUANG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 5 | 5 | |
2013 | Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management | Pal, J.; Migliorato, M. A.; Li, C. K.; Wu, Y. R.; Crutchley, B. G.; Marko, I. P.; Sweeney, S. J.; YUH-RENN WU | Journal of Applied Physics | 19 | 17 | |
2018 | Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy | W. Hahn; J-M Lentali; P Polovodov; N Young; S Nakamura; JS Speck; C Weisbuch; M Filoche; Y-R Wu; M Piccardo; F Maroun; L Martinelli; Y Lassailly; J Peretti; YUH-RENN WU | Physical Review B | 27 | 27 | |
2003 | Examination of LiNbO3/nitride heterostructures | Singh, M; Wu, YR; Singh, J; YUH-RENN WU | Solid-State Electronics | 20 | 18 | |
2008 | Extraction of transport dynamics in AlGaN/GaN HFETs through free carrier absorption | Wu, YR; Hinckley, JM; Singh, J; YUH-RENN WU | Journal of Electronic Materials | 4 | 4 | |
2023 | GaN on Si RF performance with different AlGaN back barrier | Hsieh, Chang Yan; Chen, Hui Yu; Tu, Po Tsung; Chen, Jui Chin; Yang, Hsin Yun; Yeh, Po Chun; Hsieh, De; Liu, Hsueh Hsing; Fu, Yi Keng; Sheu, Shyh Shyuan; Kuo, Hao Chung; YUH-RENN WU ; Lo, Wei Chung; Chang, Shih Chieh | 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings | 0 | 0 | |
2013 | GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities | Chi, Kai-Lun; Yeh, Shu-Ting; Yeh, Yu-Hsiang; Lin, Kun-Yan; Shi, Jin-Wei; Wu, Yuh-Renn; Lee, Ming Lun; Sheu, Jinn-Kong; YUH-RENN WU | IEEE Transactions on Electron Devices | 6 | 6 | |
1999 | Gas-assisted focused-ion-beam lithography of a diamond (100) surface | Datta, A; Wu, YR; Wang, YL; YUH-RENN WU | Applied Physics Letters | 17 | 13 | |