https://scholars.lib.ntu.edu.tw/handle/123456789/581269
標題: | Electronic properties of MoS2 nanoribbon with strain using tight-binding method | 作者: | Chen S.-F YUH-RENN WU |
關鍵字: | Band structure; Electronic properties; Layered semiconductors; Molybdenum compounds; Nanoribbons; Strain; Sulfur compounds; Transition metals; Valence bands; Carrier effective mass; Hole effective mass; MoS2; Nanoribbon structures; Quantum confinement effects; Tight binding methods; Transition metal dichalcogenides; Valence-band maximums; Tensile strain | 公開日期: | 2017 | 卷: | 254 | 期: | 2 | 來源出版物: | Physica Status Solidi (B) Basic Research | 摘要: | The tight binding method was used to calculate the band structures of MoS2 and its nanoribbon structures. We studied the influences of the quantum confinement effect and the strain effect to the band structure. The tensile strains were applied on both the confined and the transport directions of the nanoribbon. We found that the bandgap and the effective mass decrease with an increasing strain. In addition, the tensile strain along the transport direction has a better effect on reducing the hole effective mass. Although external strains can reduce the carrier effective mass, the valence band edge actually changes from the K valley to the Γ valley with a significantly larger effective mass. Sructure profile (real space and k-space) and valence band maximum under different tensile strains. ? 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85012890340&doi=10.1002%2fpssb.201600565&partnerID=40&md5=dd0f5d18f0bbc4de6fd127d242d64fc9 https://scholars.lib.ntu.edu.tw/handle/123456789/581269 |
ISSN: | 03701972 | DOI: | 10.1002/pssb.201600565 |
顯示於: | 電機工程學系 |
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