公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2006 | III-V Compound Semiconductor MOSFET | Hong, Minghwei; Kwo, J Raynien; MINGHWEI HONG | Meeting Abstracts | | | |
1997 | III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Ren, F; Hong, M; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG | 19th Annual Gallium Arsenide Integrated Circuit Symposium, 1997 | | | |
2014 | III-V compound semiconductor transistors - From planar to nanowire structures | Riel, H.; Wernersson, L.-E.; Hong, M.; Del Alamo, J.A.; MINGHWEI HONG | MRS Bulletin | 201 | 192 | |
2014 | III-V compound semiconductor transistors—from planar to nanowire structures | Riel, Heike; Wernersson, Lars-Erik; Hong, Minghwei; del Alamo, Jes{\\'u; MINGHWEI HONG | MRS Bulletin | | | |
2007 | III-V metal-oxide-semiconductor field-effect transistors with high 庥 dielectrics | Hong, M.; Kwo, J.R.; Tsai, P.-C.; Chang, Y.; Huang, M.-L.; Chen, C.-P.; Lin, T.-D.; MINGHWEI HONG | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 91 | 86 | |
2006 | III-V MOSFET's with Advanced High k Dielectrics | Hong, Minghwei; Kwo, J Raynien; Chen, CP; Chang, YC; Huang, ML; Lin, CF; MINGHWEI HONG | ECS Transactions | | | |
2006 | III-V MOSFET's with advanced high 庥 dielectrics | Hong, M.; Kwo, J.; Chen, C.P.; Chang, Y.C.; Huang, M.L.; Lin, T.D.; MINGHWEI HONG | ECS Transactions | 0 | 0 | |
2007 | III? V Metal? Oxide? Semiconductor Field-Effect Transistors with High? Dielectrics | Hong, Minghwei; Kwo, J Raynien; Tsai, Pei-chun; Chang, Yaochung; Huang, Mao-Lin; Chen, Chih-ping; others; MINGHWEI HONG | Japanese journal of applied physics | | | |
2002 | Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric | Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG | 2002 12th International Conference on Molecular Beam Epitaxy | 1 | 0 | |
2002 | Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG | 2002 International Conference on Molecular Beam Epitaxy | | | |
2003 | Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
- | Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric | Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2012 | IN BRONZE-PROCESSED Nb5Sn | Hong, M; Wu, IW; Morris Jr, JW; Gilbert, W; Hassenzahl, WV; Taylor, C; MINGHWEI HONG | Advances in Cryogenic Engineering Materials | | | |
2011 | In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2 O 3 on pristine n-GaAs (001)-4$\\times$ 6 surface | Chang, YH; Huang, ML; Chang, P; Shen, JY; Chen, BR; Hsu, CL; Pi, TW; Hong, Ma; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | | | |
2011 | In situ atomic layer deposition and synchrotron-radiation photoemission study of Al<inf>2</inf>O<inf>3</inf> on pristine n-GaAs(0 0 1)-4 ? 6 surface | Chang, Y.H.; Huang, M.L.; Chang, P.; Shen, J.Y.; Chen, B.R.; Hsu, C.L.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG | Microelectronic Engineering | 16 | 17 | |
1992 | In situ deposition of Au on plasma-prepared GaAs substrates | Choquette, Kent D; Hong, M; Mannaerts, JP; Siconolfi, DJ; Frankenthal, RP; Baiocchi, FA; Wetzel, RC; Freund, RS; MINGHWEI HONG | Journal of electronic materials | | | |
2018 | In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y <inf>2</inf> O <inf>3</inf> on a p-type GaAs(0 0 1)-4 ? 6 surface | Cheng, C.-P.; Chen, W.-S.; Cheng, Y.-T.; Wan, H.-W.; Lin, K.-Y.; Young, L.B.; Yang, C.-Y.; Pi, T.-W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Physics D: Applied Physics | 3 | 3 | |
1988 | In situ epitaxial growth of Y 1 Ba 2 Cu 3 O/sub 7-//sub x/films by molecular beam epitaxy with an activated oxygen source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | | | | |
1995 | In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity | Passlack, M; Hong, M; Schubert, EF; Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG | Applied Physics Letters | | | |
1989 | In situ formation of YBa 2 Cu 3 O/sub x/thin films by physical sputtering | Yeh, J; Hong, M; Felder, RJ; MINGHWEI HONG | | | | |