Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2014 | Passivation of GaSb using molecular beam epitaxy Y <inf>2</inf> O <inf>3</inf> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors | Chu, R.L.; Chiang, T.H.; Hsueh, W.J.; Chen, K.H.; Lin, K.Y.; Brown, G.J.; Chyi, J.I.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | |||
2011 | Self-aligned inversion-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al<inf>2</inf> O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as the gate dielectric | Chang, W.H.; Chiang, T.H.; Wu, Y.D.; MINGHWEI HONG ; Lin, C.A.; Kwo, J. | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | |||
2006 | 蓋斑鬥魚?子生成之組織超微研究 | ?忠翰; 江亭萱; 黃步敏; 王東晟; 楊西苑; Lee, T.H.; Chiang, T.H.; Huang, B.M.; Wang, T.C.; Yang, H.Y. | Taiwania |