公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2006 | InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. R. Wu; Y. T. Lin; HAO-HSIUNG LIN | 14th international conference on molecular beam epitaxy | |||
2007 | InAsPSb quaternary alloy grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. J. Wu; Y. T. Lin; HAO-HSIUNG LIN | Journal of Crystal Growth | 10 | 9 | |
2006 | InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. R. Wu; Y. T. Lin; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | |||
2009 | InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN | |||
2007 | InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy | C. J. Wu; G. Tsai; D. L. Wang; HAO-HSIUNG LIN | 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8) | |||
2005 | InPSb bulk layers grown by gas source molecular beam epitaxy | G. Tsai; HAO-HSIUNG LIN | Mid-infrared optoelectronics: Materials and Devices (MIOMD 7) | |||
2004 | MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications | G. Tsai; HAO-HSIUNG LIN | OPT 2004 | |||
2006 | Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes | A. Krier; M. Stone; Q. D. Zhuang; P. W. Liu; G. Tsai; HAO-HSIUNG LIN | Applied Physics Letters | 22 | 19 | |
2006 | Mid-infrared InAsPSb/InAsSb quantum-well light emitter | C. E. Wu; G. Tsai; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | |||
2007 | Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy | S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; H. H. Lin; P. W. Liu; G. Tsai; HAO-HSIUNG LIN | Applied Physics Letters | |||
2008 | Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics | Q. Zhuang; A. Godenir; A. Krier; G. Tsai; HAO-HSIUNG LIN | Applied Physics Letters | 23 | ||
2010 | Optical properties of As-rich InAsSb/InAsPSb multiple quantum well | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | MBE Taiwan 2010 | |||
2006 | Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy | D. L. Wang; G. Tsai; C. J. Wu; C. E. Wu; F. Tseng; HAO-HSIUNG LIN | OPT2006 | |||
2006 | Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy | P. W. Liu; G. Tsai; A. Krier; Q. D. Zhuang; M. Stone; HAO-HSIUNG LIN | Applied Physics Letters | 13 | 16 | |
2009 | Photoluminescence of InAsSb/InAsPSb quantum well | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | 2009 International electron devices and materials symposia | |||
2008 | Photoluminescence study of InAsPSb epilayers grown on GaAs substrates | Y. C. Chou; G. Tsai; HAO-HSIUNG LIN | 2008 International electron devices and materials symposia | |||
2007 | Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy | G. Tsai; D. L. Wang; HAO-HSIUNG LIN | OPT2007 | |||
2007 | Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | OPT2007 | |||
2007 | Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; HAO-HSIUNG LIN | 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8) | |||
2005 | Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy | P. W. Liu; G. Tsai; H. H. Lin; T. Krier; HAO-HSIUNG LIN | OPT2005 |