Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
---|---|---|---|---|---|---|
2010 | Optical properties of As-rich InAsSb/InAsPSb multiple quantum well | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | MBE Taiwan 2010 | |||
2006 | Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy | D. L. Wang; G. Tsai; C. J. Wu; C. E. Wu; F. Tseng; HAO-HSIUNG LIN | OPT2006 | |||
2006 | Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy | P. W. Liu; G. Tsai; A. Krier; Q. D. Zhuang; M. Stone; HAO-HSIUNG LIN | Applied Physics Letters | 13 | 16 | |
2009 | Photoluminescence of InAsSb/InAsPSb quantum well | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | 2009 International electron devices and materials symposia | |||
2008 | Photoluminescence study of InAsPSb epilayers grown on GaAs substrates | Y. C. Chou; G. Tsai; HAO-HSIUNG LIN | 2008 International electron devices and materials symposia | |||
2007 | Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy | G. Tsai; D. L. Wang; HAO-HSIUNG LIN | OPT2007 | |||
2007 | Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | OPT2007 | |||
2007 | Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; HAO-HSIUNG LIN | 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8) | |||
2005 | Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy | P. W. Liu; G. Tsai; H. H. Lin; T. Krier; HAO-HSIUNG LIN | OPT2005 | |||
2010 | Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum well | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | 10th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-X) | |||
2009 | Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wells | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | OPT2009 |