Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
1999 | Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETs | Wang, YC; MINGHWEI HONG ; Kuo, JM; Mannaerts, JP; Tsai, HS; Kwo, J; Krajewski, JJ; Chen, YK; Cho, AY | Electronics Letters | | | |
2000 | High E gate dielectrics Gd2O3 and Y2O3 for silicon | Kwo, J; MINGHWEI HONG ; Kortan, AR; Queeney, KT; Chabal, YJ; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM | Applied Physics Letters | | | |
2000 | Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states | MINGHWEI HONG ; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY | Applied Physics Letters | | | |
2000 | New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si | Kwo, J; MINGHWEI HONG ; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others | APS Meeting Abstracts | | | |
2001 | New phase formation of Gd2O3 films on GaAs (100) | Kortan, AR; MINGHWEI HONG ; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M | Journal of Vacuum Science & Technology B | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions | MINGHWEI HONG ; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2001 | Structure of Gd_2O3 films on GaAs (100) | Kortan, AR; MINGHWEI HONG ; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; others | APS Meeting Abstracts | | | |