公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2002 | Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE | L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN | Journal of Crystal Growth | 11 | ||
2001 | Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE | L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN | Optics and Photonics Taiwan | |||
2008 | Electro-modulation enhancement in the InGaNAs/GaAs quantum well structures | J. R. Lee; C. R. Lu; H. L. Liu; L. W. Sung; HAO-HSIUNG LIN | Physica Status Solidi (C) Current Topics in Solid State Physics | 0 | 0 | |
1999 | Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy | J. S. Wang; G. R. Chen; L. W. Sung; HAO-HSIUNG LIN | Optics and Photonics/Taiwan'99 | |||
2001 | Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy | J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | |||
1999 | InAsN quantum wells grown on InP by gas source MBE | J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN | 3rd international conference on mid-infrared optoelectronics materials and devices | |||
1999 | InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy | J. S. Wang; G. R. Chen; L. W. Sung; HAO-HSIUNG LIN | 1999 Electron Devices and Materials Symposia | |||
2005 | Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers | C. R. Lu; H. L. Liu; J. R. Lee; C. H. Wu; L. W. Sung; HAO-HSIUNG LIN | Journal of Physics and Chemistry of Solids | 2 | 2 | |
2002 | V-III ratio effect on Cubic GaN grown by RF plasma Assisted gas source MBE | L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN | 2001 MRS Fall Meeting |