https://scholars.lib.ntu.edu.tw/handle/123456789/317537
標題: | Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers | 作者: | C. R. Lu H. L. Liu J. R. Lee C. H. Wu L. W. Sung HAO-HSIUNG LIN |
關鍵字: | A. Quantum wells; A. Semiconductors; D. Optical properties | 公開日期: | 十一月-2005 | 卷: | 66 | 期: | 11 | 起(迄)頁: | 2082-2085 | 來源出版物: | Journal of Physics and Chemistry of Solids | 摘要: | Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=Eg(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field. © 2005 Elsevier Ltd. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-29144443686&doi=10.1016%2fj.jpcs.2005.09.059&partnerID=40&md5=07d9cfd392ead596fc6676253c672fc7 | DOI: | 10.1016/j.jpcs.2005.09.059 | SDG/關鍵字: | Mathematical models; Optical properties; Phase transitions; Semiconducting indium compounds; Semiconductor materials; A. quantum wells; A. semiconductors; D. optical properties; Semiconductor quantum wells |
顯示於: | 電機工程學系 |
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