公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2001 | HCP single crystal rare earth oxides on GaN | MINGHWEI HONG ; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, CM; Chyi, JI | APS Meeting Abstracts | | | |
2000 | High E gate dielectrics Gd2O3 and Y2O3 for silicon | Kwo, J; MINGHWEI HONG ; Kortan, AR; Queeney, KT; Chabal, YJ; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM | Applied Physics Letters | | | |
2005 | High-quality thin single-crystal $γ$-Al2O3 films grown on Si (111) | Wu, SY; MINGHWEI HONG ; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL | Applied Physics Letters | | | |
1993 | Hydrogen plasma processing of GaAs and AlGaAs | Choquette, Kent D; Freund, RS; MINGHWEI HONG ; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC | Journal of Vacuum Science & Technology B | | | |
1993 | Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy | Choquette, Kent D; MINGHWEI HONG ; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS | Applied Physics Letters | | | |
1997 | III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Ren, F; MINGHWEI HONG ; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others | 19th Annual Gallium Arsenide Integrated Circuit Symposium, 1997 | | | |
2002 | Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; MINGHWEI HONG ; Ng, K; Bude, J | 2002 International Conference on Molecular Beam Epitaxy | | | |
2003 | Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; MINGHWEI HONG ; Ng, K; Bude, J | Journal of Crystal Growth | | | |
1992 | In situ deposition of Au on plasma-prepared GaAs substrates | Choquette, Kent D; MINGHWEI HONG ; Mannaerts, JP; Siconolfi, DJ; Frankenthal, RP; Baiocchi, FA; Wetzel, RC; Freund, RS | Journal of electronic materials | | | |
1995 | In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity | Passlack, M; MINGHWEI HONG ; Schubert, EF; Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA | Applied Physics Letters | | | |
1991 | In situ growth and properties of single-crystalline-like La 2-x Sr x CuO 4 epitaxial films by off-axis sputtering (US) | Kao, HL; Kwo, J; Fleming, RM; MINGHWEI HONG ; Mannaerts, JP | | | | |
1994 | In situ nonalloyed ohmic contacts to p-GaAs | MINGHWEI HONG ; Vakhshoori, D; Mannaerts, JP; Thiel, FA; Wynn, JD | Journal of Vacuum Science & Technology B | | | |
1989 | In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitaxy with an activated oxygen source | Kwo, J; MINGHWEI HONG ; Trevor, DJ; Fleming, RM; White, AE; Mannaerts, JP; Farrow, RC; Kortan, AR; Short, KT | Physica C: Superconductivity | | | |
1989 | In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitay with an activated oxygen source | Kwo, J; MINGHWEI HONG ; Trevor, DJ; Fleming, RM; White, AE; Mannaerts, JP; Farrow, RC; Kortan, AR; Short, KT | International conference on materials and mechanisms of superconductivity | | | |
1994 | In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication | MINGHWEI HONG ; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC | Journal of electronic materials | | | |
2000 | in-V MOSFET Using Ga203/Gd203 As The Gate Oxide | Ren, F; MINGHWEI HONG ; Wang, YC; Kwo, J; Mannaerts, JP; Abernathy, CR; Pearton, SJ | Topical Workshop on Heterostructure Microelectronics | | | |
2000 | Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states | MINGHWEI HONG ; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY | Applied Physics Letters | | | |
1991 | Insitu growth and properties of single-crystalline-like La2- xSrxCuO4 epitaxial films by off-axis sputtering | Kao, HL; Kwo, J; Fleming, RM; MINGHWEI HONG ; Mannaerts, JP | Applied Physics Letters | | | |
1998 | Insulator passivation of In 0.2 Ga 0.8 As-GaAs surface quantum wells | Passlack, M; MINGHWEI HONG ; Harris, TD; Mannaerts, JP; Vakhshoori, D; Schnoes, ML | IEEE Journal of Quantum Electronics | | | |
2000 | Insulator/GaN Heterostructures of Low Interfacial Density of States | MINGHWEI HONG ; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others | MRS Proceedings | | | |