2000 | Properties of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-insulator-semiconductor diodes | MINGHWEI HONG ; Anselm, K.A.; Kwo, J.; Ng, H.M.; Baillargeon, J.N.; Kortan, A.R.; Mannaerts, J.P.; Cho, A.Y.; Lee, C.M.; Chyi, J.I.; Lay, T.S. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2002 | Single-crystal GaN/Gd<inf>2</inf>O<inf>3</inf>/GaN heterostructure | MINGHWEI HONG ; Kwo, J.; Chu, S.N.G.; Mannaerts, J.P.; Kortan, A.R.; Ng, H.M.; Cho, A.Y.; Anselm, K.A.; Lee, C.M.; Chyi, J.I. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |