Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes
Journal
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Journal Volume
18
Journal Issue
3
Pages
1453-1456
Date Issued
2000
Author(s)
Anselm, K.A.
Kwo, J.
Ng, H.M.
Baillargeon, J.N.
Kortan, A.R.
Mannaerts, J.P.
Cho, A.Y.
Lee, C.M.
Chyi, J.I.
Lay, T.S.
Type
journal article