Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes
Journal
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Journal Volume
18
Journal Issue
3
Pages
1453-1456
Date Issued
2000
Author(s)
Anselm, K.A.
Kwo, J.
Ng, H.M.
Baillargeon, J.N.
Kortan, A.R.
Mannaerts, J.P.
Cho, A.Y.
Lee, C.M.
Chyi, J.I.
Lay, T.S.
Abstract
Ga 2 O 3 ( Gd 2 O 3 ), electron beam evaporated from a single crystal Ga5Gd3O12 garnet, was ex situ deposited on molecular beam epitaxy grown GaN of Ga-polar surface. Using capacitance–voltage measurement, accumulation and depletion behavior was observed in the Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor diodes, with an interfacial density of states less than 1011 cm−2 eV−1. The Ga2O3(Gd2O3)/GaN interface remains intact with the samples subject to rapid-thermal annealing up to 950 °C, as studied from x-ray reflectivity measurements.
SDGs
Type
journal article