公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2006 | [111]B-oriented GaAsSb grown by gas source molecular beam epitaxy | L. C. Chou; Y. R. Lin; C. T. Wan; HAO-HSIUNG LIN | Microelectronics Journal | |||
2006 | [111]B-oriented GaAsSb grown by gas source molecular beam epitaxy | L. C. Chou; Y. R. Lin; HAO-HSIUNG LIN | 6th international workshop on epitaxial semiconductors on patterned substrates and novel index surface (ESPS-NIS) | |||
2009 | Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye | H. H. Lin; T. C. Ma; Y. R. Lin; J. P. Wang; C. H. Huang; HAO-HSIUNG LIN | ||||
2008 | Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers | Y. R. Lin; J. H. Chu; HAO-HSIUNG LIN | International conference on optics and photonics in Taiwan (OPT’08) | |||
2006 | Electric vertically coupled quantum dots grown by molecular beam epitaxy | Y. R. Lin; J. S. Wang; HAO-HSIUNG LIN | OPT2006 | |||
2009 | GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer | Y. R. Lin; Y. F. Lai; C. P. Liu; HAO-HSIUNG LIN | Applied Physics Letters | 2 | ||
2010 | Hetero-epitaxy of InAs on patterened Si (100) substrates | Y. T. Lin; Y. R. Lin; C. H. Ko; C. H. Wann; HAO-HSIUNG LIN | 2010 international electron devices and materials symposia | |||
2007 | Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors | Y. R. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2015 | Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques | H. P. Hsu; J. D. Wu; Y. J. Lin; Y. S. Huang; Y. R. Lin; HAO-HSIUNG LIN | Japanese Journal of Applied Physics | 1 | 1 |