公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2005 | P-type doping in GaN through Be implantation | Feng, Z. C.; Sun, Y. J.; Tan, L. S.; Chua, S. J.; Yu, J. W.; Yang, C. C.; Lu, W.; Collins, W. E. | physica status solidi (c) | | | |
2005 | Photoluminescence Spectral Features of CdTe on InSb Grown by Molecular Beam Epitaxy | Feng, Z. C.; Yu, J. W.; Chang, W. Y.; Lin, J. | Journal of Taiwan | | | |
2006 | Properties of the CdTe/InSb Interface Studied by Optical and Surface Analytical Techniques | Feng, Z. C.; Hung, S. Y.; Wee, A. T. S. | physica status solidi (a) | | | |
2005 | Pulse Source Injection Molecular Beam Epitaxy and Characterization of Nano-scale Thin GaN Layers on Si substrates | Tong, W.; Harris, M.; Wagner, B. K.; Yu, J. W.; Lin, H. C.; Feng, Z. C. | Surface and Coatings Technology | 3 | 4 | |
2004 | Raman scattering of ferroelectric lead lanthanum titanate thin films grown on fused quartz by metalorganic chemical vapor deposition | Feng, Z. C.; Chen, J. H.; Zhao, J.; Yang, T. R.; Erbil, A. | Ceramics International | | | |
2005 | Recombination Mechanism of InGaN Multiple Quantum Wells Grown by Metalorganic Chemical Vapor Deposition | Feng, Z. C.; Liu, W.; Chua, S. J.; Chen, J. H.; Yang, C. C.; Lu, W.; Collins, W. E. | physica status solidi (c) | | | |
1999 | Recrystallization of C-Al Ion Co-implanted Epitaxial 6H-SiC | Feng, Z. C.; Chua, S. J.; Tone &, K.; Zhao, J. H. | Appl. Phys. Lett | | | |
2008 | Structural and Optical Studies on Ion-implanted 6H-SiC Thin Films | Feng, Z. C.; Lien, S. C.; Zhao, J. H.; Lu, X. W. Sun and W. | Thin Solid Film | | | |
2006 | Study of carrier localization in InGaN/GaN quantum well blue-light-emitting diode structures | Chen, J. H.; Feng, Z. C.; Wang, J. C.; Tsai, H. L.; Yang, J. R.; Parekh, A.; Armour, E.; Faniano, ?P. | Journal of Crystal Growth 287: | | | |
2004 | SURFACE CHEMICAL STATES OF HETEROEPITAXIAL NITRIDE FILMS ON SAPPHIRE BY METALORGANIC CHEMICAL VAPOR DEPOSITION | LI, K.; FENG, Z. C.; YANG, C. -C.; LIN, J. | International Journal of | | | |
1991 | Tight-binding description for the bound electronic states of isolated single and paired native defects in β-SiC | Talwar, D. N.; Feng, Z. C. | Phys. Rev. B,B44 | | | |
2004 | Understanding spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(1 0 0) by modeling and simulation | Talwar, Devki N.; Feng, Z. C. | Computational Materials Science | | | |