Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
1988 | In situ epitaxial growth of Y 1 Ba 2 Cu 3 O/sub 7-//sub x/films by molecular beam epitaxy with an activated oxygen source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | | | | |
1989 | In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitaxy with an activated oxygen source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Mannaerts, JP; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | Physica C: Superconductivity | | | |
1989 | In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitay with an activated oxygen source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Mannaerts, JP; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | International conference on materials and mechanisms of superconductivity | | | |
2000 | Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states | Hong, M; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY; MINGHWEI HONG | Applied Physics Letters | | | |
1988 | Insitu epitaxial growth of Y1Ba2Cu3O7- x films by molecular beam epitaxy with an activated oxygen source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | Applied Physics Letters | | | |
2000 | Insulator/GaN Heterostructures of Low Interfacial Density of States | Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | MRS Proceedings | | | |
1991 | MBE growth and properties of Fe 3 (Al, Si) on GaAs (100) | Hong, M; Chen, HS; Kwo, J; Kortan, AR; Mannaerts, JP; Weir, BE; Feldman, LC; MINGHWEI HONG | Journal of Crystal Growth | | | |
2008 | Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection | Nieh, CW; Lee, YJ; Lee, WC; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, CH; MINGHWEI HONG | Applied Physics Letters | | | |
2000 | New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others; MINGHWEI HONG | APS Meeting Abstracts | | | |
2001 | New phase formation of Gd2O3 films on GaAs (100) | Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions | Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2002 | Papers presented at ECASIA'01-Microelectronics and Optoelectronics-Structure of Gd2O3 films epitaxially grown on GaAs (100) and GaN (0001) surfaces | Fluckiger, T; Erbudak, M; Hensch, A; Weisskopf, Y; Hong, M; Kortan, AR; MINGHWEI HONG | Surface and Interface Analysis | | | |
2000 | Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2001 | Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Opila, RL; Muller, DA; Chu, SNG; Sapjeta, BJ; Lay, TS; others; MINGHWEI HONG | Journal of Applied Physics | | | |
2001 | Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG | APS Meeting Abstracts | | | |
2012 | PROPERTIES OF IN-SITU SUPERCONDUCTING Y1Ba2Cu2O7 x FILMS BY | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | Science and Technology of Thin Film Superconductors | | | |
1989 | Properties of in-Situ Superconducting Y1Ba2Cu3O7-x Films by Molecular Beam Epitaxy with an Activated Oxygen Source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | Science and Technology of Thin Film Superconductors | | | |
1989 | Properties of superconducting Tl 2 Ba 2 Ca 2 Cu 3 O 10 films by sputtering | Hong, M; Kwo, J; Chen, CH; Kortan, AR; Bacon, DD; Liou, SH; MINGHWEI HONG | Thin Solid Films | | | |
2000 | RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Structural modifications of the Gd2O3 (110) films on GaAs (100) | Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Physical Review-Section B-Condensed Matter | | | |