公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1997 | III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Ren, F; Hong, M; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG | 19th Annual Gallium Arsenide Integrated Circuit Symposium, 1997 | | | |
2002 | Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG | 2002 International Conference on Molecular Beam Epitaxy | | | |
2003 | Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
2011 | In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2 O 3 on pristine n-GaAs (001)-4$\\times$ 6 surface | Chang, YH; Huang, ML; Chang, P; Shen, JY; Chen, BR; Hsu, CL; Pi, TW; Hong, Ma; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | | | |
1988 | In situ epitaxial growth of Y 1 Ba 2 Cu 3 O/sub 7-//sub x/films by molecular beam epitaxy with an activated oxygen source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | | | | |
1991 | In situ growth and properties of single-crystalline-like La 2-x Sr x CuO 4 epitaxial films by off-axis sputtering (US) | Kao, HL; Kwo, J; Fleming, RM; Hong, M; Mannaerts, JP; MINGHWEI HONG | | | | |
2015 | In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In) GaAs surfaces: electronic and electric structures | Pi, TW; Lin, YH; Fanchiang, YT; Chiang, TH; Wei, CH; Lin, YC; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG | Nanotechnology | | | |
1989 | In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitaxy with an activated oxygen source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Mannaerts, JP; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | Physica C: Superconductivity | | | |
1989 | In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitay with an activated oxygen source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Mannaerts, JP; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | International conference on materials and mechanisms of superconductivity | | | |
2012 | In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As | Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG | APS Meeting Abstracts | | | |
2012 | In-situ photoemission analyses of ALD-oxide/InxGa1-xAs (001) interfaces | Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
2000 | in-V MOSFET Using Ga203/Gd203 As The Gate Oxide | Ren, F; Hong, M; Wang, YC; Kwo, J; Mannaerts, JP; Abernathy, CR; Pearton, SJ; MINGHWEI HONG | Topical Workshop on Heterostructure Microelectronics | | | |
2008 | Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-k gate dielectrics | You, SL; Huang, CC; Wang, CJ; Ho, HC; Kwo, J; Lee, WC; Lee, KY; Wu, YD; Lee, YJ; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Inelastic Electron Tunneling Spectroscopy Study of MOS Diodes Based on High-kappa Gate Dielectrics | You, SL; Huang, CC; Wang, CJ; Ho, HC; Kwo, J; Lee, WC; Lee, KY; Wu, YD; Lee, YJ; Hong, M; MINGHWEI HONG | APS Meeting Abstracts | | | |
2011 | InGaAs and Ge MOSFETs with high $κ$ dielectrics | Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
2009 | InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3) High-$κ$ Dielectrics for Science and Technology beyond Si CMOS | Hong, M; Kwo, J; Lin, TD; Huang, ML; MINGHWEI HONG | MRS bulletin | | | |
2007 | InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation | Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; Hong, M; Kwo, J; Liao, CC; Cheng, KY; Lay, TS; MINGHWEI HONG | 2007 International Semiconductor Device Research Symposium | | | |
2010 | InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS | Hong, M; Kwo, J; Lin, TD; Huang, ML; Lee, WC; Chang, P; MINGHWEI HONG | Fundamentals of III-V Semiconductor MOSFETs | 1 | 4 | |
2000 | Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states | Hong, M; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY; MINGHWEI HONG | Applied Physics Letters | | | |
1988 | Insitu epitaxial growth of Y1Ba2Cu3O7- x films by molecular beam epitaxy with an activated oxygen source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | Applied Physics Letters | | | |