公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd2O3) as gate dielectrics | Lin, T.D.; Chen, C.P.; Chiu, H.C.; Chang, P.; Lin, C.A.; MINGHWEI HONG ; Kwo, J.; Tsai, W. | Device Research Conference | 14 | 0 | |
2011 | Self-aligned inversion-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al<inf>2</inf> O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as the gate dielectric | Chang, W.H.; Chiang, T.H.; Wu, Y.D.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 4 | 4 | |
2009 | Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As MOSFETs using MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectrics | Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Lin, C.A.; Chang, W.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG | 39th European Solid-State Device Research Conference | 1 | 0 | |
2009 | ZnO/Al2O3 core-shell nanorod arrays: Growth, structural characterization, and luminescent properties | Chen, C.Y.; Lin, C.A.; Chen, M.J.; Lin, G.R.; GONG-RU LIN ; MIIN-JANG CHEN | Nanotechnology | 75 | 59 | |
2010 | ZnO/Al2O3 core-shell nanorod arrays: Growth, structural characterization, and luminescent property | Chen, C.Y.; Lin, C.A.; Chen, M.J.; Lin, G.R.; GONG-RU LIN ; MIIN-JANG CHEN | INEC 2010 - 3rd International Nanoelectronics Conference | 0 | 0 | |
2009 | ZnO/Al2O3 core-shell nanorod arrays: Processing, structural characterization, and luminescent property | Chen, C.Y.; Lin, C.A.; Chen, M.J.; Lin, G.R.; He, J.H.; GONG-RU LIN | Materials Research Society Symposium | | | |