Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd 2O3) and ALD-Al2O3 as gate dielectrics

Journal

39th European Solid-State Device Research Conference

Pages

399-402

Date Issued

2009

Author(s)

Lin, T.D.

Chiu, H.C.

Chang, P.

Chang, Y.H.

Lin, C.A.

Chang, W.H.

Kwo, J.

Tsai, W.

DOI

10.1109/ESSDERC.2009.5331557

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443397

http://scholars.lib.ntu.edu.tw/handle/123456789/349414

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-72849115240&doi=10.1109%2fESSDERC.2009.5331557&partnerID=40&md5=2086a0fe7bb5bc39e6b77d0e5e1dc3ad

Type

conference paper