Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2019 | Suppression of GeO x interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices | Wang C.-I.; Chang T.-J.; Wang C.-Y.; Yin Y.-T.; Shyue J.-J.; HSIN-CHIH LIN ; MIIN-JANG CHEN | RSC Advances | 5 | 5 |