公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1998 | Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs | MINGHWEI HONG ; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others | 28th State-of-the-Art Program on Compound Semiconductors | | | |
2000 | Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states | MINGHWEI HONG ; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY | Applied Physics Letters | | | |
1998 | Structural properties of Ga2O3 (Gd2O3)-GaAs interfaces | MINGHWEI HONG ; Marcus, MA; Kwo, J; Mannaerts, JP; Sergent, AM; Chou, LJ; Hsieh, KC; Cheng, KY | Journal of Vacuum Science & Technology B | | | |