公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2014 | Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer | Liang-Yu Su; Finella Lee; Jian Jang Huang; JIAN-JANG HUANG | IEEE Transactions on Electron Devices | 70 | 90 | |
2014 | Enhancement-Mode {GaN}-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type {GaN} Cap Layer | Liang-Yu Su; Finella Lee; Jian Jang Huang; JIAN-JANG HUANG | IEEE Transactions on Electron Devices | 101 | 90 |