公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1991 | A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors | Hong, M; Mannaerts, JP; Hong, JM; Fischer, RJ; Tai, K; Kwo, J; V; enberg, JM; Wang, YH; Gamelin, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
1981 | Development studies on powder processed Nb/sub 3/Al superconducting wire | Hong, JM; Wu, IW; Holthuis, J; Hong, M; Morris Jr, JW; MINGHWEI HONG | | | | |
1982 | Developmental Studies on Powder-Processed Nb3A1 Superconducting Wire | Hong, JM; Holthuis, JT; Wu, IW; Hong, M; Morris Jr, JW; MINGHWEI HONG | Advances in Cryogenic Engineering Materials | | | |
2010 | Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO 2 as a gate dielectric | Chang, YC; Chang, WH; Chang, YH; Kwo, J; Lin, YS; Hsu, SH; Hong, JM; Tsai, CC; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
2011 | Epitaxial stabilization of a monoclinic phase in Y 2 O 3 films on c-plane GaN | Chang, WH; Chang, P; Lee, WC; Lai, TY; Kwo, J; Hsu, C-H; Hong, JM; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al 2 O 3 as a template followed by atomic layer deposition growth | Chang, YH; Chiu, HC; Chang, WH; Kwo, J; Tsai, CC; Hong, JM; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties | Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2008 | Inversion n-channel GaN MOSFETs with atomic-layer-deposited A1 2 O 3 as gate dielectrics | Chang, YC; Chang, WH; Chiu, HC; Shiu, KH; Lee, CH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG | 2008 Device Research Conference | | | |
2008 | Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectric | Chang, YC; Chang, WH; Chiu, HC; Tung, LT; Lee, CH; Shiu, KH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | Inversion-channel GaN MOSFET using atomic-layer-deposited Al 2 O 3 as gate dielectric | Chang, YC; Chang, WH; Chiu, HC; Chang, YH; Tung, LT; Lee, CH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2012 | POWDER-PROCESSED Nb5Al SUPERCONDUCTING WIRE | Hong, JM; Holthuis, JT; Wu, IW; Hong, M; Morris Jr, JW; MINGHWEI HONG | Advances in Cryogenic Engineering Materials | | | |
1983 | Superconducting properties of a liquid-infiltration Nb-Nb3Sn composite formed during a low-temperature reaction | Hong, M; Hull Jr, GW; Holthuis, JT; Hassenzahl, WV; Hong, JM; MINGHWEI HONG | Applied Physics Letters | | | |