公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2022 | 2D Materials-Based Static Random-Access Memory | Liu C.-J; Wan Y; Li L.-J; Lin C.-P; Hou T.-H; Huang Z.-Y; VITA PI-HO HU | Advanced Materials | 10 | 14 | |
2020 | Promising Engineering Approaches for Improving the Reliability of HfZrOx2-D and 3-D Ferroelectric Random Access Memories | Lin Y.-D; Yeh P.-C; Tzeng P.-J; Hou T.-H; Wu C.-I; King Y.-C; Lin C.J.; CHIH-I WU | IEEE Transactions on Electron Devices | |||
2021 | Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf1?xZrxO2 diodes | Hsiang K.-Y; Liao C.-Y; Wang J.-F; Lou Z.-F; Lin C.-Y; Chiang S.-H; Liu C.-W; Hou T.-H; Lee M.-H.; CHEE-WEE LIU | Nanomaterials |