https://scholars.lib.ntu.edu.tw/handle/123456789/607347
標題: | 2D Materials-Based Static Random-Access Memory | 作者: | Liu C.-J Wan Y Li L.-J Lin C.-P Hou T.-H Huang Z.-Y VITA PI-HO HU |
關鍵字: | Cells;Cost effectiveness;Cytology;Field effect transistors;Layered semiconductors;Molybdenum compounds;Selenium compounds;Static random access storage;Transition metals;Tungsten compounds;Channel materials;Field-effect transistor;Gate-all-around;Layer thickness;Material-based;Random access;Read access time;Scaled technologies;Static random access memory;Transition metal dichalcogenides (TMD);Monolayers | 公開日期: | 2022 | 來源出版物: | Advanced Materials | 摘要: | 2D transition-metal dichalcogenide semiconductors, such as MoS2 and WSe2, with adequate bandgaps are promising channel materials for ultrascaled logic transistors. This scalability study of 2D material (2DM)-based field-effect transistor (FET) and static random-access memory (SRAM) cells analyzing the impact of layer thickness reveals that the monolayer 2DM FET with superior electrostatics is beneficial for its ability to mitigate the read–write conflict in an SRAM cell at scaled technology nodes (1–2.1?nm). Moreover, the monolayer 2DM SRAM exhibits lower cell read access time and write time than the bilayer and trilayer 2DM SRAM cells at fixed leakage power. This simulation predicts that the optimization of 2DM SRAM designed with state-of-the-art contact resistance, mobility, and equivalent oxide thickness leads to excellent stability and operation speed at the 1-nm node. Applying the nanosheet (NS) gate-all-around (GAA) structure to 2DM further reduces cell read access time and write time and improves the area density of the SRAM cells, demonstrating a feasible scaling path beyond Si technology using 2DM NSFETs. In addition to the device design, the process challenges for 2DM NSFETs, including the cost-effective stacking of 2DM layers, formation of electrical contacts, suspended 2DM channels, and GAA structures, are also discussed. ? 2022 Wiley-VCH GmbH |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85123242181&doi=10.1002%2fadma.202107894&partnerID=40&md5=cfa97f0c6f0d988823e0821e2ca41a56 https://scholars.lib.ntu.edu.tw/handle/123456789/607347 |
ISSN: | 09359648 | DOI: | 10.1002/adma.202107894 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。