Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
---|---|---|---|---|---|---|
2010 | 100GHz depletion-mode Ga$\\less$inf$\\greater$2$\\less$/inf$\\greater$O$\\less$inf$\\greater$3$\\less$/inf$\\greater$/{GaN} single nanowire {MOSFET} by photo-enhanced chemical oxidation method | Jeng-Wei Yu; Yuh-Renn Wu; Jian-Jang Huang; Lung-Han Peng; JIAN-JANG HUANG | 2010 International Electron Devices Meeting | 3 | 0 | |
2010 | 75GHz Ga2O3/{GaN} Single Nanowire Metal- Oxide-Semiconductor Field-Effect Transistors | Jeng-Wei Yu; Yuh-Renn Wu; Jian-Jang Huang; Lung-Han Peng; JIAN-JANG HUANG ; LUNG-HAN PENG | 2010 IEEE Compound Semiconductor Integrated Circuit Symposium | 0 | 0 | |
2012 | Ga2O3/GaN single nanowire MOSFET with cut-off frequency ~150GHz | Jeng-Wei Yu; Chi-Kang Li; Po-Chun Yeh; Yuh-Renn Wu; LUNG-HAN PENG | International Workshop on Nitride Semiconductors IWN 2012 |