Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2006 | Analysis of the Gate–Source/Drain Capacitance Behavior of a Narrow-Channel FD SOI NMOS Device Considering the 3-D Fringing Capacitances Using 3-D Simulation | Chen, Chien-Chung ; Kuo, James B. ; Su, Ke-Wei; Liu, Sally | IEEE Transactions on Electron Devices |