Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2006 | Characteristics of superlattice LED with a Si<inf>0.8</inf>Ge<inf>0.2</inf> or Si capped layer at room temperature | CHIEH-HSIUNG KUAN ; Peng, Y.H.; Li, H.R.; Chen, P.S.; Suen, Y.W.; Kuan, C.H.; Lee, S.C.; CHIEH-HSIUNG KUAN | Third International SiGe Technology and Device Meeting, ISTDM 2006 | | | |
2008 | Characterization and modeling of fast traps in thermal agglomerating germanium nanocrystal metal-oxide-semiconductor capacitor | CHIEH-HSIUNG KUAN ; Chiang, K.H.; Lu, S.W.; Peng, Y.H.; Kuan, C.H.; Tsai, C.S.; CHIEH-HSIUNG KUAN | Journal of Applied Physics | | | |
2002 | Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy | CHIEH-HSIUNG KUAN ; Lee, S.W.; Chen, H.C.; Chen, L.J.; Peng, Y.H.; Kuan, C.H.; Cheng, H.H.; CHIEH-HSIUNG KUAN | Journal of Applied Physics | | | |
1999 | Efficient 193 nm-laser assisted cryogenic etching of GaN with Cl2/CH4 | Chen, B.C.; Chiang, H.C.; Yang, C.C.; Peng, Y.H.; Shih, M.C.; Chuang, T.J. | Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on | 0 | 0 | |
2008 | Electroluminescence enhancement of SiGe/Si multiple quantum wells through nanowall structures | Chen, T.T.; Hsieh, Y.P.; Wei, C.M.; Chen, Y.F.; Chen, L.-C. ; Chen, K.-H.; Peng, Y.H.; YANG-FANG CHEN ; CHIEH-HSIUNG KUAN | Nanotechnology | 2 | 3 | |
2004 | Electroluminescence evolution of Ge quantum-dot diodes with the fold number | CHIEH-HSIUNG KUAN ; Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S.; CHIEH-HSIUNG KUAN | OSA Trends in Optics and Photonics Series | | | |
2004 | Electroluminescence evolution of Ge quantum-dot diodes with the fold number | CHEE-WEE LIU ; Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S.; CHEE-WEE LIU | OSA Trends in Optics and Photonics Series | | | |
2004 | Electroluminescence evolution of Ge quantum-dot diodes with the fold number | Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S. | Lasers and Electro-Optics, 2004. (CLEO). Conference on | | | |
2005 | Enhancement of silicon photon emission with nanostructure array | CHIEH-HSIUNG KUAN ; Li, J.L.; Kuan, C.H.; Peng, Y.H.; Lo, H.C.; Chen, L.C.; CHIEH-HSIUNG KUAN | 2005 NSTI Nanotechnology Conference and Trade Show | | | |
2005 | Enhancement of silicon photon emission with nanostructure array | Li, J.L.; Kuan, C.H.; Peng, Y.H.; Lo, H.C.; Chen, L.C. | 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings | | | |
2005 | Fabrication of well-aligned and mono-modal germanium dots on the silicon substrate with trench-ridge nano-structures | CHIEH-HSIUNG KUAN ; Chen, Y.-R.; Peng, Y.H.; Kuan, C.H.; Chen, P.S.; CHIEH-HSIUNG KUAN | 2005 NSTI Nanotechnology Conference and Trade Show | | | |
2003 | Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum | Peng, Y.H.; Chen, C.C.; CHIEH-HSIUNG KUAN ; Cheng, H.H. | Solid-State Electronics | 7 | 5 | |
2002 | Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity | Peng, Y.H.; Chen, C.C.; Kuan, C.H.; Cheng, H.H. | Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the | 0 | 0 | |
2002 | Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity | CHIEH-HSIUNG KUAN ; Peng, Y.H.; Chen, C.C.; Kuan, C.H.; Cheng, H.H.; CHIEH-HSIUNG KUAN | Pacific Rim Conference on Lasers and Electro-Optics, CLEO | | | |
2004 | Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Peng, Y.H.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU | Physica Status Solidi (B) Basic Research | | | |
2007 | In-plane optical anisotropy in self-assembled Ge quantum dots induced by interfacial chemical bonds | CHIEH-HSIUNG KUAN ; YANG-FANG CHEN ; Wei, C.M.; Chen, T.T.; Chen, Y.F.; Peng, Y.H.; CHIEH-HSIUNG KUAN ; YANG-FANG CHEN | Applied Physics Letters | | | |
2000 | Novel structure in Ge/Si epilayers grown at low temperature | CHIEH-HSIUNG KUAN ; Cheng, H.H.; Chia, C.T.; Markov, V.A.; Guo, X.J.; Chen, C.C.; Peng, Y.H.; CHIEH-HSIUNG KUAN | Thin Solid Films | | | |
2007 | Photogalvanic effects for interband transition in p-Si0.5 Ge0.5 Si multiple quantum wells | CHIEH-HSIUNG KUAN ; YANG-FANG CHEN ; Wei, C.M.; Cho, K.S.; Chen, Y.F.; Peng, Y.H.; Chiu, C.W.; CHIEH-HSIUNG KUAN ; YANG-FANG CHEN | Applied Physics Letters | | | |
2006 | Physical and electrical characteristics of metal-oxide-semiconductor capacitor containing germanium nanocrystals | CHIEH-HSIUNG KUAN ; Chiang, K.H.; Lu, S.W.; Peng, Y.H.; Chen, P.S.; CHIEH-HSIUNG KUAN | Third International SiGe Technology and Device Meeting, ISTDM 2006 | | | |
2009 | Selectively enhanced emission and suppression in Si<inf>0.5</inf> Ge <inf>0.5</inf> /Si multiple quantum wells by photonic crystals | CHIEH-HSIUNG KUAN ; YANG-FANG CHEN ; Wei, C.M.; Chen, T.T.; Chen, C.W.; Wang, C.H.; Chen, Y.F.; Peng, Y.H.; CHIEH-HSIUNG KUAN ; YANG-FANG CHEN | Journal of Applied Physics | | | |