公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2005 | Effects of Silicon Doping on the Nanostructures of InGaN/GaN Quantum Wells | Chen, M. K.; Cheng, Y.C.; Chen, J. Y.; Wu, C. M.; Yang, C. C.; Ma, K. J.; JER-REN YANG ; Rosenauer, A. | Journal of Crystal Growth | 14 | | |
2004 | Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers | CHIH-CHUNG YANG ; Cheng, Y.-C.; Wu, C.-M.; Chen, M.-K.; Yang, C.C.; Feng, Z.-C.; Li, G.A.; Yang, J.-R.; Rosenauer, A.; Ma, K.-J.; CHIH-CHUNG YANG | Applied Physics Letters | | | |
2004 | Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions | Cheng, Y.-C.; Lin, E.-C.; Wu, C.-M.; Rosenauer, A.; Ma, K.-J.; Shi, S.-C.; Pan, C.-C.; Lin, En-Chiang; Wu, Cheng-Ming; Yang, C. C.; Yang, Jer-Ren ; Rosenauer,; reas; Ma, Kung-Jen; Shi, Shih-Chen; LI-CHYONG CHEN; Pan, Chang-Chi; Chyi, Jen-Inn; CHIH-CHUNG YANG | Applied Physics Letters | 59 | 53 | |