公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material | Darakchieva, V.; Lorenz, K.; Barradas, N.P.; Alves, E.; Monemar, B.; Schubert, M.; Franco, N.; Hsiao, C.L.; Chen, L.C. ; Schaff, W.J.; Tu, L.W.; Yamaguchi, T.; Nanishi, Y. | Applied Physics Letters | 38 | 37 | |
1997 | Novel Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) passivation techniques to produce low D <inf>it</inf> oxide-GaAs interfaces | Hong, M.; Mannaerts, J.P.; Bower, J.E.; Kwo, J.; Passlack, M.; Hwang, W.-Y.; Tu, L.W.; MINGHWEI HONG | Journal of Crystal Growth | 73 | 68 | |
2011 | Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations | Darakchieva, V.; Lorenz, K.; Xie, M.-Y.; Alves, E.; Hsiao, C.L.; Chen, L.C. ; Tu, L.W.; Schaff, W.J.; Yamaguchi, T.; Nanishi, Y. | Journal of Applied Physics | 3 | 3 | |