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College of Science / 理學院
Physics / 物理學系
Novel Ga 2 O 3 (Gd 2 O 3 ) passivation techniques to produce low D it oxide-GaAs interfaces
Details
Novel Ga 2 O 3 (Gd 2 O 3 ) passivation techniques to produce low D it oxide-GaAs interfaces
Journal
Journal of Crystal Growth
Journal Issue
PART 1
Pages
422-427
Date Issued
1997
Author(s)
MINGHWEI HONG
Mannaerts, J.P.
Bower, J.E.
Kwo, J.
Passlack, M.
Hwang, W.-Y.
Tu, L.W.
DOI
10.1016/S0022-0248(96)01202-X
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443494
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031146596&doi=10.1016%2fS0022-0248%2896%2901202-X&partnerID=40&md5=d75e33613bc678465cb349933607b1bc
Type
journal article