公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2000 | Comparison of Cl<inf>2</inf>and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma source | Tian, W.-C.; Weigold, J.W.; Pang, S.W.; WEI-CHENG TIAN | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 61 |